[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-5] DC/pulse characteristics in AlGaN /GaN HEMTs on semi-insulating GaN substrate

^○Takuma Nanjo¹, Akifumi Imai¹, Yosuke Suzuki¹, Hiroyuki Okazaki¹, Muneyoshi Suita¹, Marika Nakamura¹, Eiji Yagyu¹, Hiroshi Ohji¹ (Mitsubishi Electric.¹)

Keywords:GaN