[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-7] Switching loss analysis of commercial 200V class GaN-HEMT and Si-SJMOSFET

^○（M2）Tomoya Minami¹, Hiroshi Chonan², Toshihide Ide², Mitsuaki Shimizu², Noboru Miura¹ (Meiji Univ¹, AIST ADPERC²)

Keywords:GaN-HEMT