The 60th JSAP Spring Meeting,2013

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Regular sessions(Poster presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[29p-PA2-1~10] 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PA2 (1st gymnasium)

[29p-PA2-8] Investigation of variable factor under the gate electrode using transparent gate AlGaN/GaN HEMT

○Tomotaka Narita1, Akio Wakejima1, Takashi Egawa1 (Nagoya Inst. of Tech.1)

Keywords:窒化ガリウム、高電子移動度トランジスタ