[29p-PB1-1~20] 13.3 Insulator technology

[29p-PB1-12] Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

^○（M2）Chih-Yu Chang¹, Masafumi Yokoyama¹, Sang-Hyeon Kim¹, Osamu Ichikawa², Takenori Osada², Masahiko Hata², Mitsuru Takenaka¹, Shinichi Takagi¹ (The University of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

Keywords:ゲートスタック、InGaAs、メタルゲート電極