[29p-PB1-1~20] 13.3 Insulator technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB1 (2nd gymnasium)

Poster Session 13:30〜15:30(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-PB1-1] Thermal annealing effect on paramagnetic defects in silicon nitride films

^○（M2）Naushad Shakoor¹, Kokichi Ishikawa¹, Kyoteru Kobayashi¹ (Tokai University¹)

[29p-PB1-2] Penetration of water and hydrogen halide molecules into SiN films with defects

^○Tomoki Oku¹, Toshihiko Shiga¹, Masahiro Totsuka¹, Masayoshi Takemi¹ (Mitsubisi Electric Corp.¹)

[29p-PB1-3] Soft X-ray photoemission spectroscopy study of the SiO₂ film formed by nitric acid oxidation method on Si(100)

^○Hiroki Nakajima¹, Yuichi Sugizaki¹, Saori Imanishi¹, Kazuyuki Edamoto¹, Taketoshi Matsumoto², Hikaru Kobayashi² (Rikkyo Univ.¹, ISIR, Osaka Univ.²)

[29p-PB1-4] Humidification effect of annealing gas on quality of silicone-oil Si oxide film

^○Taichi Tsujino¹, Susumu Horita¹ (JAIST¹)

[29p-PB1-5] Detrap of trapped charge in SiO2 film

^○（M1）yusuke takigaura¹, ryu hasunuma², kikuo yamabe³ (Tsukuba Univ.¹, Tsukuba Univ.², Tsukuba Univ.³)

[29p-PB1-6] First-principles analysis on mechanical properties of SiO2 and GeO2 crystal and amorphous

^○（M1）Takahiro Hosokawa¹, Koji Sueoka¹, Koji Araki², Koji Izunome² (Okayama Pref. Univ.¹, Global Wafers Co.²)

[29p-PB1-7] A Study on Introduction of SiN Interface Layer to Fabrication of high-k on Si and Ge

^○Shimpei Tachikawa¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech¹)

[29p-PB1-8] Variation of electrical properties of polycrystalline HfO2 film due to oxidation and reduction annealing

^○Hisanori Momma¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (Univ. of Tsukuba¹)

[29p-PB1-9] Oxidation annealing effect on two dimensional leakage current distribution at the same spot of polycrystalline HfO₂

^○Kyohei Shimoda¹, Ryu Hasunuma¹, Kikuo Yamabe¹, Shinji Migita² (Tsukuba Univ.¹, AIST²)

[29p-PB1-10] Reliability measurement of La-silicate gate dielectrics with tungsten carbide gate electrodes

^○Shuhei Hosoda¹, Tuokedaerhan Kamale¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech,FRC¹, Tokyo Tech.IGSSE²)

[29p-PB1-11] Improvement of La₂O₃/In_0.53Ga_0.47As interface property using atomic-layer-deposition

^○Hiroshi Oomine¹, Zade Darius¹, Yuya Suzuki¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Takeo Hattori¹, Kenji Natori¹, Hiroshi Iwai¹ (FRC, Tokyo Tech.¹, IGSSE, Tokyo Tech.²)

[29p-PB1-12] Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

^○（M2）Chih-Yu Chang¹, Masafumi Yokoyama¹, Sang-Hyeon Kim¹, Osamu Ichikawa², Takenori Osada², Masahiko Hata², Mitsuru Takenaka¹, Shinichi Takagi¹ (The University of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

[29p-PB1-13] Examination of initial surface-residual-oxides on the interface property of InGaAs/ALD-Al₂O₃

^○Toshiyuki Yoshida¹ (Shimane Univ.¹)

[29p-PB1-14] Initial Stage of Oxidation on In_0.53Ga_0.47As in Different Oxidative Atmosphere Studied by AR-XPS

^○Takuya Sakurai¹, Yuya Numajiri¹, Kouji Yamashita¹, Darius Zade², Kuniyuki Kakushima³, Hiroshi Iwai², Hiroshi Nohira¹ (Tokyo City Univ¹, FRC.Tokyo Inst. of Tech², IGSSE.Tokyo Inst. of Tech³)

[29p-PB1-15] Electrical characteristics of HfO₂ MOS capacitors fabricated on GaSb(100)-c(2x6) surfaces

^○Noriyuki Miyata¹, Akihiro Ohtake², Masakazu Ichikawa³, Tetsuji Yasuda¹ (AIST¹, NIMS², Univ. Tokyo³)

[29p-PB1-16] Spontaneous formation of aluminum germanate on Ge substrate by atomic layer deposition with microwave-generated atomic oxygen

Kousei Yanachi¹, Takehiro Hanada¹, Hiroki Ishizaki¹, Yohei Otani¹, Chiaya Yamamoto², Junji Yamanaka², Tetsuya Sato², Hiroshi Okamoto³, ^○Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi², Hirosaki Univ.³)

[29p-PB1-17] Fabrication of HfO₂/ Al Germanate/ Ge by Atomic Layer Deposition Technique

Takehiro Hanada¹, Kousei Yanachi¹, ^○Hiroki Ishizaki¹, Yohei Otani¹, Chiaya Yamamoto², Junji Yamanaka², Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

[29p-PB1-18] ▲The Valence Band Offset at GeO₂/Ge Interface Determined by Charge-corrected XPS

^○Wenfeng Zhang^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Koji Kita^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

[29p-PB1-19] ▲The Conduction Band Offset at GeO₂/Ge Interface Probed by IPE

^○Wenfeng Zhang^1,2, Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Koji Kita^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

[29p-PB1-20] Suppression of Reaction at Au/Ge Interface by Ultra-thin Insulator Insertion and its Correlation with Fermi Level Pinning

^○Tomonori Nishimura^1,2, Kosuke Nagashio^1,2, Koji Kita^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Session information

[29p-PB1-1~20] 13.3 Insulator technology