The 60th JSAP Spring Meeting,2013

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Regular sessions(Poster presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[29p-PB1-1~20] 13.3 Insulator technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB1 (2nd gymnasium)

[29p-PB1-13] Examination of initial surface-residual-oxides on the interface property of InGaAs/ALD-Al2O3

○Toshiyuki Yoshida1 (Shimane Univ.1)

Keywords:InGaAs、Al2O3、自然酸化膜