Initial Stage of Oxidation on In<sub>0.53</sub>Ga<sub>0.47</sub>As in Different Oxidative Atmosphere Studied by AR-XPS

Takuya Sakurai

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Regular sessions(Poster presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[29p-PB1-1~20] 13.3 Insulator technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB1 (2nd gymnasium)

[29p-PB1-14] Initial Stage of Oxidation on In_0.53Ga_0.47As in Different Oxidative Atmosphere Studied by AR-XPS

^○Takuya Sakurai¹, Yuya Numajiri¹, Kouji Yamashita¹, Darius Zade², Kuniyuki Kakushima³, Hiroshi Iwai², Hiroshi Nohira¹ (Tokyo City Univ¹, FRC.Tokyo Inst. of Tech², IGSSE.Tokyo Inst. of Tech³)

Keywords:AR-XPS、初期酸化過程、In0.53Ga0.47As

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Presentation information

[29p-PB1-1~20] 13.3 Insulator technology

[29p-PB1-14] Initial Stage of Oxidation on In0.53Ga0.47As in Different Oxidative Atmosphere Studied by AR-XPS

[29p-PB1-14] Initial Stage of Oxidation on In_0.53Ga_0.47As in Different Oxidative Atmosphere Studied by AR-XPS