[29p-PB1-1~20] 13.3 Insulator technology

[29p-PB1-15] Electrical characteristics of HfO₂ MOS capacitors fabricated on GaSb(100)-c(2x6) surfaces

^○Noriyuki Miyata¹, Akihiro Ohtake², Masakazu Ichikawa³, Tetsuji Yasuda¹ (AIST¹, NIMS², Univ. Tokyo³)

Keywords:III-V チャネル、GaSb、HfO2