[29p-PB1-1~20] 13.3 Insulator technology

[29p-PB1-17] Fabrication of HfO₂/ Al Germanate/ Ge by Atomic Layer Deposition Technique

Takehiro Hanada¹, Kousei Yanachi¹, ^○Hiroki Ishizaki¹, Yohei Otani¹, Chiaya Yamamoto², Junji Yamanaka², Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

Keywords:Al Germanate、原子堆積法、Ge-MOSデバイス