[29p-PB1-1~20] 13.3 Insulator technology

[29p-PB1-3] Soft X-ray photoemission spectroscopy study of the SiO₂ film formed by nitric acid oxidation method on Si(100)

^○Hiroki Nakajima¹, Yuichi Sugizaki¹, Saori Imanishi¹, Kazuyuki Edamoto¹, Taketoshi Matsumoto², Hikaru Kobayashi² (Rikkyo Univ.¹, ISIR, Osaka Univ.²)

Keywords:半導体