[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-11] Short-Time Activation of Impurity in SiC Wafer by Atmospheric Pressure Thermal Plasma Jet Irradiation

^○Ryuhei Ashihara¹, Hiroaki Hanafusa¹, Hideki Murakami¹, Shohei Hayashi¹, Shunki Koyanagi¹, Keisuke Maruyama¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

Keywords:SiC、TPJ、活性化