[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-12] Leakage Current Reduction of 4H-SiC Schottky Barrier Diode by using Sacrificial Oxidation

^○Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Shinichiro Kuroki¹, Takamaro Kikkawa¹ (Research Institute of Nanodevice and Bio Systems, Hiroshima University¹, Phenitec Semiconductor Co.,Ltd.²)

Keywords:SiC