[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-13] LET and Thickness Dependence of Critical Electric Field 4H-SiC MOS Capacitors

^○Manato Deki^1,2, Takahiro Makino¹, Takuro Tomita², Kazutoshi Kojima³, Takeshi Ohshima¹ (JAEA¹, Tokushima Univ.², AIST³)

Keywords:Silicon Carbide、炭化ケイ素