[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-3] Theoretical study on the structure and electronic state of screw dislocations in SiC (II)

^○Takahiro Yamasaki¹, Jun Nara², Junichiro Koga³, Tsuyoshi Uda³, Akiyoshi Kuroda⁴, Kazuo Minami⁴, Takahisa Ohno^2,5 (FUJITSU Lab. Ltd.¹, NIMS², ASMS³, RIKEN⁴, IIS, Univ. Tokyo⁵)

Keywords:貫通螺旋転位、TSD、第一原理計算