[30p-A7-1~8] 10.1 Creation of new materials

[30p-A7-7] ▼Influence of interface termination layer on temperature dependence of tunneling magnetoresistance of Co₂MnSi/MgO-based magnetic tunnel junctions

^○Hongxi Liu¹, Yusuke Honda¹, Ken-ichi Matsuda¹, Tetsuya Uemura¹, Masafumi Yamamoto¹, Fengyuan Shi², Paul Voyles² (Hokkaido Univ.¹, Univ. of Wisconsin-Madison²)

Keywords:Heusler alloy