Session information

Symposium

Symposium » Low-Temperature Growth of Group-IV Semiconductors on Insulator -Emerging New Crystallization Techniques -

[17p-A19-1~12] Low-Temperature Growth of Group-IV Semiconductors on Insulator -Emerging New Crystallization Techniques -

Wed. Sep 17, 2014 1:15 PM - 5:45 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[17p-A19-1] xpectation for Low-Temperature Growth Technique of Group-IV Semiconductors on Insulator

^○Taizoh Sadoh¹ (Kyushu Univ.¹)

1:30 PM - 2:00 PM

[17p-A19-2] Low Temperature Crystallization using BLDA for Device Applications

^○Takashi Noguchi¹, Tatsuya Okada² (Univ. Eyukyus,¹, Univ. Eyukyus,²)

2:00 PM - 2:30 PM

[17p-A19-3] Atmospheric Pressure Plasma Crystallization and Single-crystalline Layer Transfer for High-performance Thin-Film Transistor Fabrication on Glass and Plastics

^○Seiichiro Higashi^1,2, Shohei Hayashi¹, Seiji Morisaki¹, Muneki Akazawa¹, Kouhei Sakaike¹ (Grad. School Adv. Sci. Matter, Hiroshima Univ.¹, Research Inst. Nanodevice Bio Systems, Hiroshima Univ.²)

2:30 PM - 3:00 PM

[17p-A19-4] Low-Temperature Crystallization of Amorphous Si_XGe_1-X Film by Soft X-Ray Irradiation

^○Matsuo Naoto¹, Heya Akira¹, Itoh Kazuhiro², Takahashi Makoto², Kanda Kazuhiro³, Mochizuki Takayasu³, Miyamoto Shuji³ (Graduate school, Univ. Hyogo¹, Joining and Welding Res.Inst. Osaka Univ.², LASTI, Univ.Hyogo³)

3:00 PM - 3:15 PM

[17p-A19-5] Internal Stress of Low Temperature Polycrystalline Si Film on Polycarbonate Substrate

^○Naoya Kawamoto¹, Kazuyuki Tadatomo¹, Akira Heya², Naoto Matsuo² (Yamaguchi Univ.¹, Univ. of Hyogo²)

Break 15:15～15:30 (3:15 PM - 3:30 PM)

3:30 PM - 4:00 PM

[17p-A19-6] Demonstration of poly-Ge growth by flash lamp annealing and the MOSFET operation

^○Koji Usuda¹, Yoshiki Kamata¹, Yuuichi Kamimuta¹, Takahiro Mori¹, Masahiro Koike¹, Tsutomu Tezuka¹ (AIST-GNC¹)

4:00 PM - 4:30 PM

[17p-A19-7] Crystal orientation control of Ge thin films on amorphous substrates
by metal-induced layer exchange

^○Kaoru Toko¹, Koki Nakazawa¹, Naoki Oya¹, Noritaka Usami², Takashi Suemasu¹ (Univ. of Tsukuba¹, Nagoya Univ.²)

4:30 PM - 4:45 PM

[17p-A19-8] Physics of Al-induced crystallization -- Aiming for an orientation control of silicon --

^○Masashi Kurosawa^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹, JSPS²)

4:45 PM - 5:00 PM

[17p-A19-9] Ultra-low temperature (≤ 250^oC) formation of orientation-controlled SiGe mixed crystals by gold-induced crystallization for advanced flexible electronics

^○Jong-Hyeok Park^1,2, Masanobu Miyao¹, Taizoh Sadoh¹ (Kyushu Univ.¹, JSPS Research Fellow²)

5:00 PM - 5:15 PM

[17p-A19-10] Electron irradiation effect on Au induced lateral crystallization for amorphous Ge/SiO₂

^○(B)Kenta Moto¹, Shin Sakiyama¹, Hayato Okamoto¹, Takatsugu Sakai¹, Kazutoshi Nakashima¹, Hideyuki Hara², Hiroto Nishimura², Kenichiro Takakura¹, Isao Tsunoda¹ (KNCT¹, Bruker BioSpin²)

5:15 PM - 5:30 PM

[17p-A19-11] Stress stimulation effect on Au induced lateral crystallization for amorphous Ge/SiO₂

^○(B)Takatsugu Sakai¹, Kazutoshi Nakashima¹, Kenta Moto¹, Shinichi Motoyama², Yutaka Kusuda², Masahiro Furuta², Nobuyuki Naka³, Tomoko Mumata³, Kenichiro Takakura¹, Isao Tsunoda¹ (KNCT¹, SAMCO², HORIBA³)

5:30 PM - 5:45 PM

[17p-A19-12] Closing Remark

^○Takashi Noguchi¹ (Univ. Ryukyus¹)

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