Session information

Oral presentation

17. Nanocarbon Technology » 17.4 Device application

[17p-B1-1~3] 17.4 Device application

Wed. Sep 17, 2014 1:15 PM - 2:00 PM B1 (Seminar1)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 (11:45 AM - 1:15 PM)

1:15 PM - 1:30 PM

[17p-B1-1] Fabrication of top-gated MoS₂ FET with Al₂O₃ insulator

^○Naruki Ninomiya^1,2, Takahiro Mori², Noriyuki Uchida², Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Masatoshi Tanaka¹, Atsushi Ando² (Yokohama National Univ.¹, AIST², NIMS³)

1:30 PM - 1:45 PM

[17p-B1-2] Observation of Charge Transfer at the Metal-Channel Interface Region in MoS₂ FET

^○(M2)Ryota Suto¹, Keiichiro Tashima¹, Nana Yasukawa¹, Yuta Kitada², Naoka Nagamura², Itaru Honma², Koji Horiba³, Masaharu Oshima³, Hirokazu Fukidome¹, Maki Suemitsu¹ (Tohoku Univ. RIEC¹, Tohoku Univ. IMRAM², Tokyo Univ. SRRO³)

1:45 PM - 2:00 PM

[17p-B1-3] Flexible logic circuits using large-area WSe2 films

^○Kazuma Funahashi¹, Jiang Pu¹, Lain-Jong Li², Yoshihiro Iwasa^3,4, Taishi Takenobu^1,5 (Waseda Univ.¹, Academia Sinica², Univ. of Tokyo³, RIKEN CEMS⁴, Waseda ZAIKEN⁵)

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