Session information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15～14:00 (12:15 PM - 2:00 PM)

2:00 PM - 2:15 PM

[18p-A22-1] Novel Overlaid Field Plate for Improvement of Drain I-V Characteristics of AlGaN/GaN HEMTs

^○Suguru Mase¹, Takashi Egawa¹, Akio Wakejima¹ (Nagoya Institute of Technology¹)

2:15 PM - 2:30 PM

[18p-A22-2] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (III)

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

2:30 PM - 2:45 PM

[18p-A22-3] Transfer characteristics in AlGaN /GaN Schottky contncts on semi-insulating GaN substrate

^○Takuma Nanjo¹, Akifumi Imai¹, Kenichiro Kurahashi¹, Yosuke Suzuki¹, Muneyoshi Suita¹, Toshiyuki Tanaka¹, Eiji Yagyu¹ (Mitsubishi Electric Corp.¹)

2:45 PM - 3:00 PM

[18p-A22-4] 150-nm InAlN/GaN HEMT fabricated by Y-gate process

^○Hiroyuki Ichikawa¹, Chihoko Mizue¹, Isao Makabe¹, Yasunori Tateno¹, Ken Nakata¹, Kazutaka Inoue¹ (Sumitomo Electric Industries, Ltd.¹)

3:00 PM - 3:15 PM

[18p-A22-5] Normally-Off GaN HEMT using Digital Etching Technique

^○Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu², Yasuyuki Miyamoto¹ (Tokyo Tech¹, Mitsubishi Electric Corporation²)

3:15 PM - 3:30 PM

[18p-A22-6] Analyses of contact resistance factors on non-alloy contacts to 2DEG of AlGaN/GaN structures from dependence of AlGaN layer thickness on resistance

^○Yusuke Takei¹, Mari Okamoto¹, Shin Man¹, Rei Kayanuma¹, Tomohiro Shimoda¹, Youhei Mitsui¹, Wataru Saito², Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (Tokyo Inst. Technology¹, Toshiba²)

3:30 PM - 3:45 PM

[18p-A22-7] Reduction of threshold voltage in ALD-Al₂O₃/AlGaN/GaN MIS-HEMT by post-deposition annealing

^○(M2)Yusuke Yoshida¹, Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

3:45 PM - 4:00 PM

△ [18p-A22-8] Study on temperature dependence of breakdown voltage in AlGaN/GaN HEMTs

^○(PC)Kazuki Kodama¹, Hirokuni Tokuda¹, Masaaki Kuzahara¹ (Univ. of Fukui¹)

Break 16:00～16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

[18p-A22-9] Influence of InAlN Spacer on Electrical Properties of AlGaN/GaN and InAlN/GaN Heterostructure

^○Hiromasa Murakoshi¹, Arata Watanabe¹, Takashi Egawa¹ (Nagoya Inst. Tech.¹)

4:30 PM - 4:45 PM

[18p-A22-10] Enhanced 2DEG mobility by thermally induced strain between deposited metals and AlGaN/GaN heterostructures

^○Goh Kawaguchi¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (Fukui Univ.¹)

4:45 PM - 5:00 PM

[18p-A22-11] Investigation of heat dissipation in AlGaN/GaN HEMTs transferred to a copper plate using layered BN release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

5:00 PM - 5:15 PM

[18p-A22-12] Investigation on threshold voltage of GaN-based junctionless transistors by device simulation

^○Minjae Yoon¹, Akira Nakajima², Kuniyuki Kakushima¹, Yoshinori Kataoka¹, Akira Nishiyama¹, Hitoshi Wakabayashi¹, Kenji Natori¹, Kazuo Tsutsui¹, Nobuyuki Sugii¹, Hirosi Iwai¹, Shinichi Nishizawa², Hiromichi Ohasi² (Tokyo Tech.¹, AIST²)

5:15 PM - 5:30 PM

[18p-A22-13] Investigation of Fe atom diffusion in Ga₂O₃

^○Kohei Sasaki^1,2, Man Hoi Wong², Masataka Higashiwaki², Akito Kuramata¹, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT²)

5:30 PM - 5:45 PM

[18p-A22-14] Band alignment of Al2O3/β-Ga2O¬3 heterojunctions

^○Kamimura Takafumi¹, Sasaki Kohei^2,1, Wong Man Hoi¹, Krishnamurthy Daivasigamani¹, Kuramata Akito², Yamakoshi Shigenobu¹, Higashiwaki Masataka¹ (NICT¹, Tamura Corp.²)

5:45 PM - 6:00 PM

△ [18p-A22-15] Frequency Dependence Gate Capacitance of Diamond MOSFETs

^○(M1)Kazuya Harada¹, Kazuyuki Hirama², Toshiyuki Oishi¹, Makoto Kasu¹ (Saga Univ.¹, NTT BRL²)

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