Lunch 12:00～13:30 (12:00 PM - 1:30 PM)

1:30 PM - 1:45 PM

[19p-A16-1] First principles analysis on stability of IV element dopant in Ge crystal for solar cells (2)

^○(M2)Ryo Matsutani¹, Koji Sueoka¹, Eiji Kamiyama^1,2 (Okayama Pref. Univ.¹, GlobalWafers .Japan²)

1:45 PM - 2:00 PM

[19p-A16-2] Basic study on energy band structure of IV element compound semiconductors for solar cell (2)

^○(M2)Ryo Suwa¹, Koji Sueoka¹, Eiji Kamiyama^1,2 (Okayama Pref. Univ.¹, GlobalWafers Japan²)

2:00 PM - 2:15 PM

[19p-A16-3] Effect of Hydrogen Surfactant on Epitaxial Growth of Ge_1-xSn_x Layers

^○Takanori Asano^1,2, Noriyuki Taoka¹, Koya Hozaki¹, Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, Research Fellow of JSPS²)

2:15 PM - 2:30 PM

[19p-A16-4] Formation of GeSn layers on Si substrates by sputter epitaxy method

^○Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (Tokyo Univ. Agric. Technol.¹, NICT²)

2:30 PM - 2:45 PM

[19p-A16-5] Growth of Ge_1-xSn_x Thin Films by Metal Organic Chemical Vapor Deposition

^○yuuki inuzuka¹, shinichi ike^1,2, takanori asano^1,2, wakana takeuchi¹, osamu nakatsuka¹, shigeaki zaima¹ (Graduate School of Eng. Nagoya Univ.¹, JSPS Research Fellow²)

2:45 PM - 3:00 PM

[19p-A16-6] Ge Epitaxial Growth using Metal Organic Chemical Vapor Deposition (2)

^○Kohei Suda¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (Meiji Univ.¹, Gas-phase Growth², Toyota Technological Inst.³)

3:00 PM - 3:15 PM

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD

^○Kohei Suda¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (Meiji Univ.¹, Gas-phase Growth², Toyota Technological Inst.³)

3:15 PM - 3:30 PM

[19p-A16-8] Selective removal of islands on Al-induced crystallized Ge and evaluation of its optical properties

^○Koki Nakazawa¹, Kaoru Toko¹, Takashi Suemasu¹ (Univ. of Tsukuba¹)

3:30 PM - 3:45 PM

[19p-A16-9] High Sn-content polycrystalline GeSn layers formed by Sn-induced low-temperature crystallization (70 ℃) of amorphous Ge on glass

^○Naoki Oya¹, Kaoru Toko¹, Takashi Suemasu¹ (Univ. of Tsukuba¹)

Break 15:45～16:00 (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

[19p-A16-10] Solid-phase growth of Si thin film on Si template grown by aluminum-induced-crystallization

^○(M1)Yasuhiro Sujihara¹, Sergii Tutashkonko^1,2, Isao Takahashi¹, Noritaka Usami¹ (Nagoya Univ.¹, JST-PV innovation²)

4:15 PM - 4:30 PM

△ [19p-A16-11] Germanium Film Crystallized on Amorphous Substrates by Laser Annealing

^○Toru Takao¹, Masahiro Horita¹, Koji Yamasaki¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (Nara Inst. of Sci. and Tech.¹)

4:30 PM - 4:45 PM

[19p-A16-12] High-Speed Solid-Phase Crystallization of a-GeSn at Ultra-Low Temperature (<250oC) on Insulating Substrate

^○Ryo Matsumura^1,2, Masaya Sasaki¹, Hironori Chikita¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹, JSPS Research Fellow²)

4:45 PM - 5:00 PM

△ [19p-A16-13] Ultra-low temperature (<250oC) lateral solid-phase crystallization of GeSn on insulating substrate -Position control by low temperature melting Sn nuclei-

^○Hironori Chikita¹, Ryo Matsumura¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹)

5:00 PM - 5:15 PM

△ [19p-A16-14] Initial crystal orientation and its stability of GeSn wires on Si substrate fabricated by lateral liquid-phase epitaxy

^○Kohei Tominaga¹, Keiko Kajimura¹, Takashi Amamoto¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

5:15 PM - 5:30 PM

△ [19p-A16-15] Electrical characterization of GeSn-on-insulator layers fabricated by lateral liquid-phase epitaxy

^○Keiko Kajimura¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

5:30 PM - 5:45 PM

△ [19p-A16-16] Solid phase epitaxy of SiSn thin-films with high Sn content(>20%)

^○Motohiro Kato¹, Masashi Kurosawa^1,2, Takashi Yamaha¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya University¹, JSPS Research Fellow (PD)²)

5:45 PM - 6:00 PM

[19p-A16-17] First observation of band-gap narrowing for Si_1-xSn_x thin-films with Sn incorporation

^○Masashi Kurosawa^1,2, Shigehisa Shibayama^1,3, Motohiro Kato¹, Takashi Yamaha¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS(PD)², JSPS(DC)³)

6:00 PM - 6:15 PM

[19p-A16-18] Carrier transport properties and thermal conductance of polycrystalline Ge and GeSn

^○Noriyuki Uchida¹, Tatsurou Maeda¹, Kouichi Fukuda¹, Junichi Hattori¹, Shingo Okajima², Yujji Ohishi², Manabu Ishimaru³, Lieten Ruben⁴, Jean-Pierre Locquet⁴ (NeRI-AIST¹, Osaka univ.², Kyushu Inst. Tech.³, KU Leuven⁴)

Session information

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

[19p-A16-1] First principles analysis on stability of IV element dopant in Ge crystal for solar cells (2)

[19p-A16-2] Basic study on energy band structure of IV element compound semiconductors for solar cell (2)

[19p-A16-3] Effect of Hydrogen Surfactant on Epitaxial Growth of Ge_1-xSn_x Layers

[19p-A16-4] Formation of GeSn layers on Si substrates by sputter epitaxy method

[19p-A16-5] Growth of Ge_1-xSn_x Thin Films by Metal Organic Chemical Vapor Deposition

[19p-A16-6] Ge Epitaxial Growth using Metal Organic Chemical Vapor Deposition (2)

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD

[19p-A16-8] Selective removal of islands on Al-induced crystallized Ge and evaluation of its optical properties

[19p-A16-9] High Sn-content polycrystalline GeSn layers formed by Sn-induced low-temperature crystallization (70 ℃) of amorphous Ge on glass

[19p-A16-10] Solid-phase growth of Si thin film on Si template grown by aluminum-induced-crystallization

△ [19p-A16-11] Germanium Film Crystallized on Amorphous Substrates by Laser Annealing

[19p-A16-12] High-Speed Solid-Phase Crystallization of a-GeSn at Ultra-Low Temperature (<250oC) on Insulating Substrate

△ [19p-A16-13] Ultra-low temperature (<250oC) lateral solid-phase crystallization of GeSn on insulating substrate -Position control by low temperature melting Sn nuclei-

△ [19p-A16-14] Initial crystal orientation and its stability of GeSn wires on Si substrate fabricated by lateral liquid-phase epitaxy

△ [19p-A16-15] Electrical characterization of GeSn-on-insulator layers fabricated by lateral liquid-phase epitaxy

△ [19p-A16-16] Solid phase epitaxy of SiSn thin-films with high Sn content(>20%)

[19p-A16-17] First observation of band-gap narrowing for Si_1-xSn_x thin-films with Sn incorporation

[19p-A16-18] Carrier transport properties and thermal conductance of polycrystalline Ge and GeSn

Session information

[19p-A16-1~18] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [19p-A16-7] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD

△ [19p-A16-11] Germanium Film Crystallized on Amorphous Substrates by Laser Annealing

△ [19p-A16-13] Ultra-low temperature (<250oC) lateral solid-phase crystallization of GeSn on insulating substrate -Position control by low temperature melting Sn nuclei-

△ [19p-A16-14] Initial crystal orientation and its stability of GeSn wires on Si substrate fabricated by lateral liquid-phase epitaxy

△ [19p-A16-15] Electrical characterization of GeSn-on-insulator layers fabricated by lateral liquid-phase epitaxy

△ [19p-A16-16] Solid phase epitaxy of SiSn thin-films with high Sn content(>20%)

△ [19p-A16-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD