[17p-A17-1~14] 15.6 IV-group-based compounds

[17p-A17-13] Schottky diode characteristics of TiC and TiSi2 electrodes on SiC substrates

^○Tomoyuki Suzuki¹, Mari Okamoto², Osamu Munekiyo², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE²)

Keywords:ショットキーダイオード