Evaluation method of the gate dielectric reliability under negative gate bias with the ultraviolet irradiation for supplying hole to SiC MOS capacitors

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

3:30 PM - 3:45 PM

^○Teruyuki Ohashi¹, Ryosuke Iijima¹, Kazuto Takao¹ (Corporate R&D Center, Toshiba Corp.¹)

Keywords:SiC,MOSFET,絶縁膜