Critical Electric Field in Ion Irradiated 4H-SiC MOSFETs

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

3:45 PM - 4:00 PM

^○Manato Deki^1,2, Takahiro Makino², Takuro Tomita¹, Kazutoshi Kojima³, Takeshi Ohshima² (The Univ. of Tokushima¹, JAEA², AIST³)

Keywords:Silicon Carbide