Temperature dependence of Hall mobility in AlGaN/GaN heterostructure with modulation doped GaN capped layer

Presentation information

Oral presentation

Code-sharing session » 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A27 (N302)

2:30 PM - 2:45 PM

^○Akihiro Ando¹, Yamato Osada², Ryuichiro Kamimura², Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst¹, ULVAC²)

Keywords:GaN,Hall