Oral presentation

[17a-A27-1~11] 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 9:00 AM - 12:00 PM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-A27-1] Formation of Electrode for GaN-based Blue Light-emitting Diode by Screen Printing of Ag nanoparticle inks.

^○Tasuku Shigemune¹, Atsushi Koizumi¹, Yukiyasu Kashiwagi², Hiroshi Kakiuchi³, Yasutaka Takemura⁴, Mari Yamamoto², Masashi Saitoh², Masanari Takahashi², Toshinobu Ohno², Masami Nakamoto², Nobuyoshi Aoyagi³, Yukio Yoshida³, Kouichiro Murahashi⁴, Kuniaki Otsuka⁴, Yasuffumi Fujiwara¹ (Osaka Univ.¹, Osaka Municipal Tech Res Inst.², Daiken Chemical Co.,Ltd.³, Okuno Chemical Industries Co.,Ltd.⁴)

9:15 AM - 9:30 AM

[17a-A27-2] Study about the reaction during anodization of InP

^○(M1C)Taihei Iwasaki¹, Yoshitaka Morishita¹ (Tokyo Univ. of Agri & Tech¹)

9:30 AM - 9:45 AM

[17a-A27-3] ReRAM behavior of a double-sided anodic porous alumina

^○(M1)Hiroto Ogawa¹, Yoshitaka Morishita¹, Takaya Hosono¹ (Tokyo Univ. of Agri & Tech¹)

9:45 AM - 10:00 AM

△ [17a-A27-4] In-situ cross-sectional observation of operated SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

^○Norimichi Chinone¹, Yasuo Cho¹ (Tohoku Univ.¹)

10:00 AM - 10:15 AM

△ [17a-A27-5] Impact of Gate Delay Time in InGaAs-HEMTs Operated in a Class-F Amplifier

^○Tomohiro Yoshida¹, Masashi Oyama², Kunihiko Watanabe², Yohtaro Umeda², Taiichi Otsuji¹, Tetsuya Suemitsu¹ (RIEC, Tohoku Univ.¹, Tokyo University of Science²)

10:15 AM - 10:30 AM

[17a-A27-6] Analysis of influence of threading dislocation on device characteristics of InSb HEMT

^○Shota Hatsushiba¹, Shohei Nagai¹, Sachie Fujikawa¹, Shinsuke Hara², Akira Endoh², Issei Watanabe^1,2, Akifumi Kasamatsu², Hiroki Fujishiro^1,2 (TUS¹, NICT²)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [17a-A27-7] Body Width Dependence of Subthreshold Slope and On-Current in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

^○(M2)Kazumi Ohashi¹, Motohiko Fujimatsu¹, Yauyuki Miyamoto¹ (Tokyo Tech.¹)

11:00 AM - 11:15 AM

[17a-A27-8] Highly Sensitive Planar-Doped GaAsSb-based Backward Diodes at 170 GHz

^○Tsuyoshi Takahashi^1,2, Masaru Sato^1,2, Yasuhiro Nakasha^1,2, Shoichi Shiba^1,2, Naoki Hara^1,2, Taisuke Iwai² (Fujitsu¹, Fujitsu Labs.²)

11:15 AM - 11:30 AM

[17a-A27-9] Preliminary study on the fabrication of transferred-substrate InP HBTs using surface activated bonding

^○Yuta Shiratori¹, Norihide Kashio¹, Kenji Kurishima¹, Takuya Hoshi¹, Eiji Higurashi², Hideaki Matsuzaki¹ (NTT Photonics Laboratories¹, Univ. of Tokyo²)

11:30 AM - 11:45 AM

△ [17a-A27-10] CBr₄ flow modulation for forming compositionally-graded InGaAsSb base of InP-based DHBTs

^○(D)Takuya Hoshi^1,3, Norihide Kashio¹, Hiroki Sugiyama¹, Haruki Yokoyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹, Masaki Kohtoku¹, Hideki Gotoh^2,3 (NTT Photonics Labs.¹, NTT Basic Research Labs.², Univ. Tsukuba³)

11:45 AM - 12:00 PM

[17a-A27-11] High-Current-Gain InP/InGaAs DHBT with f_t and f_max of over 450 GHz

^○Norihide Kashio¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (NTT Photonics Lab.¹)

Oral presentation

[17p-A27-1~14] 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～14:00 （12:00 PM - 2:00 PM）

2:00 PM - 2:15 PM

[17p-A27-1] Dispersion of trap concentrations in MOCVD n-GaN on GaN substrate

^○Kazuki Miyamoto¹, Yutaka Tokuda¹ (Aichi Inst. of Technol.¹)

2:15 PM - 2:30 PM

▲ [17p-A27-2] Influence of intentional impurities (O, C) on the epitaxial GaN layers properties

^〇(P)Yaxin Wang¹, Takashi Teramoto², Kazuhiro Ohkawa¹ (TUS¹, AL²)

2:30 PM - 2:45 PM

[17p-A27-3] Temperature dependence of Hall mobility in AlGaN/GaN heterostructure with modulation doped GaN capped layer

^○Akihiro Ando¹, Yamato Osada², Ryuichiro Kamimura², Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst¹, ULVAC²)

2:45 PM - 3:00 PM

[17p-A27-4] Analysis of interface traps in AlGaN/GaN heterojunction by conductance method

^○Toshiyuki Baba¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenzi Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

3:00 PM - 3:15 PM

[17p-A27-5] Extraction of Band Alignment of Metal/AlGaN/GaN Structures with HXPES

^○Kazuki Ohga¹, Jiangning Chen¹, Taka masa Kawanago², Kuniyuki Kakushima², Hiroshi Nohira³, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Tokyo City Univ³)

3:15 PM - 3:30 PM

[17p-A27-6] MOCVD growth and characterization of nearly-lattice-matched InAlN/AlGaN 2DEG heterostructures

^○Shu Fujita¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

3:30 PM - 3:45 PM

[17p-A27-7] Electrical properties of Si doped AlInN/GaN heterostructures grown by MOVPE

^○Kazuki Ikeyama¹, Toshiki Yasuda¹, Yugo Kozuka¹, Kosuke Horikawa¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac. Sci.&Tech.Meijo Univ.¹, ARC, Nagoya Univ.²)

Break 15:45～16:00 （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

▲ [17p-A27-8] RTA of MOVPE-grown Mg-doped In_xGa_1-xN (x~0.3) for Mg activation

^〇Mdtanvir Hasan^1,2, A. Mihara^1,2, N. Shigekawa³, A. Yamamoto^1,2, M. Kuzuhara¹ (Univ. of Fukui¹, JST-CREST², Osaka City Univ.³)

4:15 PM - 4:30 PM

[17p-A27-9] Relationship between epitaxial layer structure and buffer leakage current in AlGaN/GaN HEMT on Si substrate

^○Noriyuki Watanabe¹, Shinichi Tanabe¹, Narihiko Maeda¹, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹)

4:30 PM - 4:45 PM

[17p-A27-10] Control of leakage current on AlGaN/GaN-based p-channel HFETs

^○Rei Kayanuma¹, Shunsuke Kubota¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^2,3, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (Tokyo Tech. IGSSE¹, Tokyo Tech. FRC², AIST³)

4:45 PM - 5:00 PM

△ [17p-A27-11] Study on carrier dynamics of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

^○(M2)Yuki Tsutsui¹, Hirotsugu Ogi¹, Nobutomo Nakamura¹, Yusuke Mori², Mamoru Imade², Masashi Yoshimura², Masahiko Hirao¹ (Osaka Univ. Grad. Sch. of Engineering Science¹, Osaka Univ. Grad. Sch. of Engineering²)

5:00 PM - 5:15 PM

[17p-A27-12] Electric characterization of GaN film on sapphire using THz ellipsometry

^○Takashi Fujii^1,4, Toshiyuki Iwamoto¹, Yukonori Sato¹, Satoshi Kamiyama², Takeshi Nagashima³, Tsutomu Araki⁴ (PNP¹, Meijo Univ.², Setsunan Univ.³, Ritsumeikan Univ.⁴)

5:15 PM - 5:30 PM

[17p-A27-13] Improvement of the device performance in AlGaN/GaN HFET UV photosensors by Mg-doped AlGaN

^○Yuma Yamamoto¹, Takuya Murase¹, Toshiki Kusafuka¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Fac.Sci. & Technol., Meijo Univ.¹, Akasaki Inst., Nagoya Univ.²)

5:30 PM - 5:45 PM

[17p-A27-14] Radiation Hard AlGaN/GaN Heterostructure- Micro-Hall Sensors

Abdelkader Abderrahmane¹, ^○Tsukasa Takamura², Shinichiro Sato³, Takeshi Ohshima³, Hiroshi Okada^1,2, Adarsh Sandhu^1,2 (Toyohashi Univ. Tech.¹, Toyohashi Univ. Tech. EIIRIS², Japan Atomic Energy Agency³)

Sessions

Code-sharing session » 14.3/15.4 Code-sharing session

[17a-A27-1~11] 14.3/15.4 Code-sharing session

[17a-A27-1] Formation of Electrode for GaN-based Blue Light-emitting Diode by Screen Printing of Ag nanoparticle inks.

[17a-A27-2] Study about the reaction during anodization of InP

[17a-A27-3] ReRAM behavior of a double-sided anodic porous alumina

△ [17a-A27-4] In-situ cross-sectional observation of operated SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

△ [17a-A27-5] Impact of Gate Delay Time in InGaAs-HEMTs Operated in a Class-F Amplifier

[17a-A27-6] Analysis of influence of threading dislocation on device characteristics of InSb HEMT

△ [17a-A27-7] Body Width Dependence of Subthreshold Slope and On-Current in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

[17a-A27-8] Highly Sensitive Planar-Doped GaAsSb-based Backward Diodes at 170 GHz

[17a-A27-9] Preliminary study on the fabrication of transferred-substrate InP HBTs using surface activated bonding

△ [17a-A27-10] CBr₄ flow modulation for forming compositionally-graded InGaAsSb base of InP-based DHBTs

[17a-A27-11] High-Current-Gain InP/InGaAs DHBT with f_t and f_max of over 450 GHz

[17p-A27-1~14] 14.3/15.4 Code-sharing session

[17p-A27-1] Dispersion of trap concentrations in MOCVD n-GaN on GaN substrate

▲ [17p-A27-2] Influence of intentional impurities (O, C) on the epitaxial GaN layers properties

[17p-A27-3] Temperature dependence of Hall mobility in AlGaN/GaN heterostructure with modulation doped GaN capped layer

[17p-A27-4] Analysis of interface traps in AlGaN/GaN heterojunction by conductance method

[17p-A27-5] Extraction of Band Alignment of Metal/AlGaN/GaN Structures with HXPES

[17p-A27-6] MOCVD growth and characterization of nearly-lattice-matched InAlN/AlGaN 2DEG heterostructures

[17p-A27-7] Electrical properties of Si doped AlInN/GaN heterostructures grown by MOVPE

▲ [17p-A27-8] RTA of MOVPE-grown Mg-doped In_xGa_1-xN (x~0.3) for Mg activation

[17p-A27-9] Relationship between epitaxial layer structure and buffer leakage current in AlGaN/GaN HEMT on Si substrate

[17p-A27-10] Control of leakage current on AlGaN/GaN-based p-channel HFETs

△ [17p-A27-11] Study on carrier dynamics of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

[17p-A27-12] Electric characterization of GaN film on sapphire using THz ellipsometry

[17p-A27-13] Improvement of the device performance in AlGaN/GaN HFET UV photosensors by Mg-doped AlGaN

[17p-A27-14] Radiation Hard AlGaN/GaN Heterostructure- Micro-Hall Sensors

Sessions

Code-sharing session » 14.3/15.4 Code-sharing session

[17a-A27-1~11] 14.3/15.4 Code-sharing session

△ [17a-A27-4] In-situ cross-sectional observation of operated SiC-DMOSFET using super-higher-order nonlinear dielectric microscopy

△ [17a-A27-5] Impact of Gate Delay Time in InGaAs-HEMTs Operated in a Class-F Amplifier

△ [17a-A27-7] Body Width Dependence of Subthreshold Slope and On-Current in GaAsSb/InGaAs Double-Gate Vertical Tunnel FETs

△ [17a-A27-10] CBr4 flow modulation for forming compositionally-graded InGaAsSb base of InP-based DHBTs

[17p-A27-1~14] 14.3/15.4 Code-sharing session

▲ [17p-A27-2] Influence of intentional impurities (O, C) on the epitaxial GaN layers properties

▲ [17p-A27-8] RTA of MOVPE-grown Mg-doped InxGa1-xN (x~0.3) for Mg activation

△ [17p-A27-11] Study on carrier dynamics of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

△ [17a-A27-10] CBr₄ flow modulation for forming compositionally-graded InGaAsSb base of InP-based DHBTs

▲ [17p-A27-8] RTA of MOVPE-grown Mg-doped In_xGa_1-xN (x~0.3) for Mg activation