The 75th JSAP Autumn Meeting, 2014

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15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

5:15 PM - 5:30 PM

[17p-C5-13] High-Speed Growth of InN on Nitrided Yttria-Stabilized Zirconia (111) substrates Using a Two-Step Precursor Generation HVPE System

○Chie Kojima1, Rie Togashi1, Hisashi Murakami1, Yoshinao Kumagai1, Akinori Koukitu1 (Dept. of Appl. Chem., Tokyo Univ. of Agri. & Tech.1)

Keywords:InN,HVPE