The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

5:30 PM - 5:45 PM

[17p-C5-14] Epitaxial growth of GaN thin films by reactive sputtering

Yuji Isosaki1, Yuichiro Yamashita2, Takashi Yagi2, Junjun Jia1, Naoyuki Taketoshi2, Shinichi Nakamura1, Yuzo Shigesato1 (Aoyama Gakuin University1, National Institute of Advanced Industrial Science and Technology2)

Keywords:GaN,反応性スパッタ,熱物性