[18a-A16-1~11] 13.4 Devices/Integration Technologies

[18a-A16-2] Analysis of DIBL fluctuation of FinFET caused by granular work function variation of metal gates

^○Takashi Matsukawa¹, Kouichi Fukuda¹, YongXun Liu¹, Kazuhiko Endo¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Shinichi O'uchi¹, Shinji Migita¹, Wataru Mizubayashi¹, Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹)

Keywords:FinFET,特性ばらつき,DIBL