[18a-A16-1~11] 13.4 Devices/Integration Technologies

△ [18a-A16-9] Random Telegraph Noise in Tri-Gate Silicon Nanowire MOSFETs and Enhanced RTN by Hot Carrier Injection and Negative Bias Temperature Instability

^○Kensuke Ota¹, Masumi Saitoh¹, Chika Tanaka¹, Daisuke Matsushita¹, Toshinori Numata¹ (Toshiba R&D Center¹)

Keywords:ナノワイヤ,ランダムテレグラフノイズ,信頼性