[18a-A16-1~11] 13.4 Devices/Integration Technologies

Thu. Sep 18, 2014 9:00 AM - 12:00 PM A16 (E307)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A16-1] Systematic Statistical Analysis of Characteristics Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs and Bulk MOSFETs

^○(M1)Katsuhisa Tanaka¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, LEAP²)

9:15 AM - 9:30 AM

[18a-A16-2] Analysis of DIBL fluctuation of FinFET caused by granular work function variation of metal gates

^○Takashi Matsukawa¹, Kouichi Fukuda¹, YongXun Liu¹, Kazuhiko Endo¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Shinichi O'uchi¹, Shinji Migita¹, Wataru Mizubayashi¹, Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹)

9:30 AM - 9:45 AM

[18a-A16-3] Statistical Analysis of Minimum Operation Voltage (V_min) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells

^○Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, LEAP²)

9:45 AM - 10:00 AM

▲ [18a-A16-4] Analysis of Delay Time Degradation of Ultra-Low Supply Voltage CMOS Circuit Operating in Subthreshold Region

^○(D)Seung-Min Jung¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (IIS¹)

10:00 AM - 10:15 AM

[18a-A16-5] Vt-tuning technology with low variability for SOTB-FinFETs by back-biasing

^○Takashi Matsukawa¹, YongXun Liu¹, Kazuhiko Endo¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Shinichi O'uchi¹, Shinji Migita¹, Yukinori Morita¹, Wataru Mizubayshi¹, Hiroyuki Ota¹, Meishoku Masahara¹ (AIST¹)

10:15 AM - 10:30 AM

△ [18a-A16-6] Ultra-Low Voltage (0.1V) Operation of Vth Self-Adjusting MOSFET and SRAM Cell

^○(M2)Akitsugu Ueda^1,2, Seung-Min Jung¹, Tomoko Mizutani¹, Anil Kumar¹, Takuya Saraya¹, Toshiro Hiramoto¹ (iis Univ of Tokyo¹, Chuo Univ²)

Break 10:30～10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[18a-A16-7] Statistical Analysis of Random Telegraph Noise (RTN) in Linear Region and Saturation Region in Scaled Bulk Transistors

^○Misumi Kawakami¹, Tomoko Mizutani¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹)

11:00 AM - 11:15 AM

[18a-A16-8] Comparison of Statistical Distribution of Random Telegraph Noise (RTN) in Bulk and SOTB MOSFETs

^○Yuki Komine¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, LEAP²)

11:15 AM - 11:30 AM

△ [18a-A16-9] Random Telegraph Noise in Tri-Gate Silicon Nanowire MOSFETs and Enhanced RTN by Hot Carrier Injection and Negative Bias Temperature Instability

^○Kensuke Ota¹, Masumi Saitoh¹, Chika Tanaka¹, Daisuke Matsushita¹, Toshinori Numata¹ (Toshiba R&D Center¹)

11:30 AM - 11:45 AM

△ [18a-A16-10] Investigations on Time Constant Variations in Random Telegraph Noise Phenomena and its Underlying Physical Mechanisms

^○Jiezhi Chen¹, Yusuke Higashi¹, Koichi Kato¹, Yuichiro Mitani¹ (Toshiba R&D Center¹)

11:45 AM - 12:00 PM

[18a-A16-11] Observation of Individual Trap by means of Thermally Stimulated Voltage Shift

^○Yoshiki Yonamoto¹ (Hitachi, Ltd., YRL¹)