The 75th JSAP Autumn Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A19 (E311)

12:00 PM - 12:15 PM

[18a-A19-12] Investigation of area occupied by voids formed on wafer bonded InP/SiO2 interface

○Keiichi Matsumoto1, Yoshinori Kanaya1, Junya Kishikawa1, Kazuhiko Shimomura1 (Sophia Univ.1)

Keywords:直接貼付法,InP/SiO2,ボイド