[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

[18a-A19-4] Low-temperature formation of Ge diodes fabricated by laser doping in phosphoric acid

^○Kouta Takahashi¹, Masashi Kurosawa^1,2, Hiroshi Ikenoue³, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS², Kyushu Univ.³)

Keywords:レーザドーピング