The 75th JSAP Autumn Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A19 (E311)

11:00 AM - 11:15 AM

[18a-A19-8] Electrical properties of epitaxial Si-rich silicide films composed of W-encapsulating Si clusters

○Naoya Okada1,2, Noriyuki Uchida2, Toshihiko Kanayama2 (JST, PRESTO1, AIST2)

Keywords:シリサイド,接合