The 75th JSAP Autumn Meeting, 2014

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Oral presentation

07. Beam Technology and Nanofabrication » 7.6 Ion beams

[18p-A14-1~18] 7.6 Ion beams

Thu. Sep 18, 2014 1:15 PM - 6:15 PM A14 (E305)

5:45 PM - 6:00 PM

[18p-A14-17] Effect of ion irradiation energy in GaN growth on the Ga-ion-implanted SiNx surface (II)

○(M2)Yuto Matsui1, Azamat Osyurahunov1, Junichi Yanagisawa1 (Univ. of Shiga Prefecture1)

Keywords:イオンビーム,GaN,選択成長