[18p-A16-1~14] 13.4 Devices/Integration Technologies

[18p-A16-13] Formation and Electrical Characteristics of MoS₂ Film by High-Temperature Sputtering

^○Kentarou Matsuura¹, Takumi Ohashi¹, Shimpei Yamaguchi¹, Kouhei Suda², Seiya Ishihara², Naomi Sawamoto², Kuniyuki Kakushima¹, Nobuyuki Sugii¹, Akira Nishiyama¹, Yoshinori Kataoka¹, Kenji Natori¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Atsushi Ogura², Hitoshi Wakabayahi¹ (Tokyo Tech.¹, Meiji Univ.²)

Keywords:MoS2,二次元材料,高温スパッタリング