The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[18p-A16-1~14] 13.4 Devices/Integration Technologies

Thu. Sep 18, 2014 1:30 PM - 5:15 PM A16 (E307)

4:45 PM - 5:00 PM

[18p-A16-13] Formation and Electrical Characteristics of MoS2 Film by High-Temperature Sputtering

Kentarou Matsuura1, Takumi Ohashi1, Shimpei Yamaguchi1, Kouhei Suda2, Seiya Ishihara2, Naomi Sawamoto2, Kuniyuki Kakushima1, Nobuyuki Sugii1, Akira Nishiyama1, Yoshinori Kataoka1, Kenji Natori1, Kazuo Tsutsui1, Hiroshi Iwai1, Atsushi Ogura2, Hitoshi Wakabayahi1 (Tokyo Tech.1, Meiji Univ.2)

Keywords:MoS2,二次元材料,高温スパッタリング