The 75th JSAP Autumn Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[18p-A16-1~14] 13.4 Devices/Integration Technologies

Thu. Sep 18, 2014 1:30 PM - 5:15 PM A16 (E307)

2:00 PM - 2:15 PM

[18p-A16-3] A scaling limit of MOSFETs associated with drain electrode

○Kenji Natori1 (Tokyo Tech.1)

Keywords:MOSFET,ドレイン,微細化限界