[18p-A19-1~14] 13.3 Si Process・Interconnect・MEMS・Integration

[18p-A19-4] Sensitivity improvement of a pyroelectric infrared sensor by a thinned metallization layer

^○(M1)Shota Yonemaru¹, Koji Oishi¹, Daisuke Akai^1,2, Makoto Ishida^1,2 (Toyohashi Tech.¹, EIRIS, Toyohashi Tech.²)

Keywords:赤外線センサ,MEMS,PZT