The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)

6:30 PM - 6:45 PM

[18p-A20-20] Growth of high-temperature-partially-capped InAs/GaAs single quantum dots with As2 source

○(P)Masahiro Kakuda1, Jinkwan Kwoen2, Yasutomo Ota1, Katsuyuki Watanabe2, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2 (The Univ. of Tokyo1, The Univ. of Tokyo2)

Keywords:分子線エピタキシー