The 75th JSAP Autumn Meeting, 2014

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

3:00 PM - 3:15 PM

[18p-A22-5] Normally-Off GaN HEMT using Digital Etching Technique

○Ryota Yamanaka1, Toru Kanazawa1, Eiji Yagyu2, Yasuyuki Miyamoto1 (Tokyo Tech1, Mitsubishi Electric Corporation2)

Keywords:GaN HEMT