[18p-PB10-1~11] 15.5 IV-group crystals and IV-IV-group mixed crystals

[18p-PB10-11] Electrical properties of strained Ge MOS structure with Al2O3 gate dielectric

^○Tsuyoshi Fukayama¹, Sinnosuke Tanaka², Takahisa Tanaka², Myronov Maksym³, Hideyuki Maki², Kohei Itoh², kentarou sawano¹ (Tokyo City Univ¹, Keio Univ², Univ. of Warwick³)

Keywords:半導体