[18p-PB10-1~11] 15.5 IV-group crystals and IV-IV-group mixed crystals

[18p-PB10-5] Strained-Si Formation Technology Using SiGe Buffer Formed by Sputter Epitaxy Method

^○Akira Motohashi¹, Nobumitsu Hirose², Akihumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric & Technol.¹, National Institute of Information and Communications technology²)

Keywords:半導体