[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-12] Impact of post-oxidation annealing on Ni silicidation rate of Si nanowires

^○Jing Sun¹, Shuichiro Hashimoto¹, Hiroki Kosugiyama¹, Kohei Takei¹, Shuhei Asada¹, Taiyu Xu¹, Takashi Wakamizu¹, Ryosuke Imai², Hiroki Tokutake², Takashi Matsukawa³, Motohiro Tomita², Atsushi Ogura², Meishoku Masahara³, Takanobu Watanabe¹ (Waseda Univ.¹, Meiji Univ.², AIST³)

Keywords:Siナノワイヤ,Niシリサイド