[19p-A15-1~12] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-A15-7] Monte Carlo simulation of ion implantation into polycrystalline silicon with different states of crystallinity

^○Yuki Sekino¹, Yoshinori Yokota¹, Sanae Ito¹, Nobutoshi Aoki¹, Kazunari Ishimaru¹, Kiyotaka Miyano² (Toshiba Corp. Semiconductor Storage Products Company¹, NuFlare Technology, Inc.²)

Keywords:プロセスシミュレーション,ポリシリコン,モンテカルロイオン注入