The 75th JSAP Autumn Meeting, 2014

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13. Semiconductors A (Silicon) » 13.2 Insulator technology

[19p-A17-1~11] 13.2 Insulator technology

Fri. Sep 19, 2014 2:00 PM - 5:00 PM A17 (E308)

3:15 PM - 3:30 PM

[19p-A17-6] Kr/O2 ECR plasma oxidation effects on Al2O3/Ge gate stack formed by ALD

○(M2)Yuichi Nagaoka1, Yuta Nagatomi1, Keisuke Yamamoto2, Dong Wang1, Hiroshi Nakashima2 (I-Eggs, Kyushu Univ.1, KASTEC, Kyushu Univ.2)

Keywords:半導体,ゲルマニウム,原子層堆積