The 75th JSAP Autumn Meeting, 2014

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[19p-A17-1~11] 13.2 Insulator technology

Fri. Sep 19, 2014 2:00 PM - 5:00 PM A17 (E308)

3:45 PM - 4:00 PM

△ [19p-A17-7] The impact of gate electrode on HfO2/Al2O3/SiGe0.32 MOS interface with plasma post-nitridation

○(D)Jaehoon Han1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (Univ. of Tokyo1, JST-CREST2)

Keywords:SiGe,プラズマ後窒化,ゲート電極