Oral presentation

[19a-A17-1~12] 13.2 Insulator technology

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [19a-A17-1] Evidence for Si up-diffusion during scavenging of interfacial SiO₂ in HfO₂/SiO₂/Si stack

^○(D)Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kousuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

9:15 AM - 9:30 AM

[19a-A17-2] Ferrolectric characteristics of HfO2 in Hf1-xZrxO2-HfO2 stack

^○Tomonori Nishimura¹, Takeaki Yajima¹, Kosuke Nagashio¹, Akira Toriumi¹ (The Univ. of Tokyo¹)

9:30 AM - 9:45 AM

[19a-A17-3] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO2 Interface: Replication of both positive and negative direction dipole layer

^○Kosuke Shimura¹, Masahiro Hashiguchi¹, Ryota Kunugi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

9:45 AM - 10:00 AM

[19a-A17-4] Flatband voltage measurements of Si-MOS capacitors with La₂O₃/HfO₂/SiO₂ multi-stacked gate dielectrics

^○Ryo Fukui¹, Yoshinori Nakamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Hitoshi Wakabayashi², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

10:00 AM - 10:15 AM

[19a-A17-5] Origin of thermal instability and subsequent defect formation of La-silicate/Si gate stack

^○Yasushi Nakasaki¹, Misako Morota¹, Akira Takashima¹, Koichi Kato¹, Yuichiro Mitani¹ (Toshiba R&D Center¹)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 11:00 AM

[19a-A17-6] [JSAP Paper Award Speech]（30min.）
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

^○Tomoyuki Suwa¹, Akinobu Teramoto¹, Yuki Kumagai¹, Kenichi Abe¹, Xiang Li¹, Yukihisa Nakao¹, Masashi Yamamoto², Hiroshi Nohira³, Takayuki Muro⁴, Toyohiko Kinoshita⁴, Shigetoshi Sugawa¹, Tadahiro Ohmi¹, Takeo Hattori¹ (Tohoku University¹, Stella Chemifa², Tokyo City University³, JASRI⁴)

11:00 AM - 11:15 AM

[19a-A17-7] Evaluation of Dielectric Constant that Deduced from Relaxation Energy at SiO₂/Si interfaces

^○Maho Moriya^1,3, Yuji Amano^2,3, Daisuke Kobayashi³, Tomoyuki Yamamoto¹, Kazuyuki Hirose³ (Waseda Univ.¹, Tokyo City Univ.², ISAS/JAXA³)

11:15 AM - 11:30 AM

[19a-A17-8] Study of the recovery rate obtained by molecular orbital calculation technique

^○Shuichiro Wakao^1,2, Kazuyuki Hirose², daisuke Kobayashi², Tomoyuki Yamamoto¹ (Waseda Univ¹, ISAS/JAXA²)

11:30 AM - 11:45 AM

△ [19a-A17-9] Optimization of SiN Composition Profile to Improve Erase-Retention Tradeoff in MONOS Memories

^○Shosuke Fujii¹, Haruka Kusai¹, Kiwamu Sakuma¹, Masato Koyama¹ (Toshiba¹)

11:45 AM - 12:00 PM

[19a-A17-10] Fabrication and Evaluation of SiO₂/Si Structures by Kr/O₂ Plasma Oxidation at Low Temperature

^○Yuta Fujikawa¹, Tomo Ueno¹, Yoshitaka Iwazaki¹ (Tokyo Univ. of Agri. & Tech.¹)

12:00 PM - 12:15 PM

△ [19a-A17-11] CO₂ Laser Annealing of Polysilazane Coated Film for Polycrystalline Silicon Thin Film Transistors.

^○Daisuke Hishitani¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yosuke Watanabe³, Hiroshi Ikenoue³, Yukiharu Uraoka^1,2 (NAIST¹, CREST², Kyushu univ.³)

12:15 PM - 12:30 PM

▲ [19a-A17-12] Improvement of S-factor method for evaluation of MOS interface state density

^○(D)Weili Cai^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST CREST²)

Oral presentation

[19p-A17-1~11] 13.2 Insulator technology

Fri. Sep 19, 2014 2:00 PM - 5:00 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

[19p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

^○Minoru Oda¹, Toshifumi Irisawa¹, Jevasuwan Wipakorn¹, Tatsuro Maeda¹, Yuuichi Kamimuta¹, Tsutomu Tezuka¹ (AIST-GNC¹)

2:15 PM - 2:30 PM

△ [19p-A17-2] Study of the Al₂O₃/GaSb MOS structures with N₂plasma treatment

^○(M2)Takahiro Gotow^1,2, Sachie Fujikawa¹, Hiroki I. Fujishiro¹, Mutsuo Ogura², Tetsuji Yasuda², Tatsuro Maeda^1,2 (TUS¹, AIST²)

2:30 PM - 2:45 PM

[19p-A17-3] Investigation of Al2O3 film characterization made by Atomic Layer Deposition method using H2O and O3 as oxidant source

^○Yoshito Nozaki¹, Tetsushi Sekiguchi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

2:45 PM - 3:00 PM

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al₂O₃/GeO₂/p-Ge

^○Kosei Yanachi¹, Tomoya Yokohira¹, Daichi Yamada¹, Yohei Otani¹, Keita Seki², Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

3:00 PM - 3:15 PM

[19p-A17-5] Effects of Oxygen radical irradiation on the electrical properties of Al₂O₃/GeO₂/p-Ge

^○Yohei Otani¹, Kosei Yanachi¹, Tomoya Yokohira¹, Daichi Yamada¹, Keita Seki², Tetsuya Sato², Yukio Fukuda¹ (Tokyo Univ. of Science, Suwa¹, Univ. of Yamanashi²)

3:15 PM - 3:30 PM

[19p-A17-6] Kr/O₂ ECR plasma oxidation effects on Al₂O₃/Ge gate stack formed by ALD

^○(M2)Yuichi Nagaoka¹, Yuta Nagatomi¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (I-Eggs, Kyushu Univ.¹, KASTEC, Kyushu Univ.²)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [19p-A17-7] The impact of gate electrode on HfO₂/Al₂O₃/SiGe_0.32 MOS interface with plasma post-nitridation

^○(D)Jaehoon Han^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST-CREST²)

4:00 PM - 4:15 PM

[19p-A17-8] Fabrication and Evaluation of Germanium Oxide Film made by CVD process

^○(M2)Yuto Matsuoka¹, Yositaka Iwasaki¹, Tomo Ueno¹ (TUAT¹)

4:15 PM - 4:30 PM

[19p-A17-9] High Quality GeO₂/Ge Interface and Property Change of GeO₂ by Hf-PMA

^○Jumpei Niida¹, Yuya Nakatani¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

4:30 PM - 4:45 PM

[19p-A17-10] Improvement of GeO₂/Ge Interface Characteristics Using Kr/O₂ Plasma

^○Yuya Nakatani¹, Junpei Niida¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (Tokyo Univ. of Agri. & Tech.¹)

4:45 PM - 5:00 PM

[19p-A17-11] Interface structures and electrical properties of gate stack structures with thin GeO₂ layer formed by pulsed metal organic chemical vapor deposition

^○Shigehisa Shibayama^1,2, Teppei Yoshida¹, Kimihiko Kato¹, Mitsuo Sakashita¹, Wakana Takeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow²)

Poster presentation

[20a-PA3-1~7] 13.2 Insulator technology

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA3 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA3会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[20a-PA3-1] Silicon oxide layer created on insulators under high temperature and high humidity

^○Tomoki Oku¹, Manabu Okumura², Toshihiko Shiga¹, Masahiro Totsuka¹, Hitoshi Watanabe¹ (Mitsubishi Electric Corp.¹, Melco Semiconductor Engineering Corp.²)

9:30 AM - 11:30 AM

△ [20a-PA3-2] A direct correlation between core-level shifts and surface morphology in SiON layer

^○Takahiro Takami¹, Makoto Wada¹, Yoshiharu Enta¹ (Hirosaki Univ.¹)

9:30 AM - 11:30 AM

[20a-PA3-3] Thermal annealing effect on paramagnetic defects in silicon nitride films (Ⅲ)

^○(M2)Aran Suzuki¹, Daiki Nagashima², Hiroki Hayashi², Kiyoteru Kobayashi^1,2 (Tokai Univ.¹, Tokai Univ.²)

9:30 AM - 11:30 AM

[20a-PA3-4] Hole trapping characteristics of low-dielectric constant SiCN charge trapping layer

^○(M1)Shin Tanaka¹, Shinji Naito¹, Kiyoteru Kobayashi¹ (Tokai Univ.¹)

9:30 AM - 11:30 AM

[20a-PA3-5] Identification of electrical breakdown spots of polycrystalline HfO2 films

^○Yusuke Tomura¹, Ryu Hasunuma¹, Kikuo Yamabe¹, Shinji Migita² (Univ. of Tsukuba¹, AIST NRI²)

9:30 AM - 11:30 AM

[20a-PA3-6] Possibility of Dipole Formation at High-k/High-k Hetero-oxide Interface

^○Masahiro Hashiguchi¹, Kosuke Shimura¹, Ryota Kunugi¹, Toyohiro Chikyow³, Atsushi Ogura^4,6, Shinichi Satoh^5,6, Takanobu Watanabe^1,2,6 (Waseda Univ¹, Waseda-INN², NIMS³, Meiji Univ⁴, Univ. of Hyogo⁵, JST-CREST⁶)

9:30 AM - 11:30 AM

[20a-PA3-7] Nano-contact Heteroepitaxy of GaSb on Si(001) and the HfO2/GaSb MOS Characteristics

^○Noriyuki Miyata¹, Akihiro Ohtake², Masakazu Ichikawa³, Takahiro Mori¹, Tetsuji Yasuda¹ (AIST¹, NIMS², Univ. Tokyo³)

Sessions

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[19a-A17-1~12] 13.2 Insulator technology

▼ [19a-A17-1] Evidence for Si up-diffusion during scavenging of interfacial SiO₂ in HfO₂/SiO₂/Si stack

[19a-A17-2] Ferrolectric characteristics of HfO2 in Hf1-xZrxO2-HfO2 stack

[19a-A17-3] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO2 Interface: Replication of both positive and negative direction dipole layer

[19a-A17-4] Flatband voltage measurements of Si-MOS capacitors with La₂O₃/HfO₂/SiO₂ multi-stacked gate dielectrics

[19a-A17-5] Origin of thermal instability and subsequent defect formation of La-silicate/Si gate stack

[19a-A17-6] [JSAP Paper Award Speech]（30min.）
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

[19a-A17-7] Evaluation of Dielectric Constant that Deduced from Relaxation Energy at SiO₂/Si interfaces

[19a-A17-8] Study of the recovery rate obtained by molecular orbital calculation technique

△ [19a-A17-9] Optimization of SiN Composition Profile to Improve Erase-Retention Tradeoff in MONOS Memories

[19a-A17-10] Fabrication and Evaluation of SiO₂/Si Structures by Kr/O₂ Plasma Oxidation at Low Temperature

△ [19a-A17-11] CO₂ Laser Annealing of Polysilazane Coated Film for Polycrystalline Silicon Thin Film Transistors.

▲ [19a-A17-12] Improvement of S-factor method for evaluation of MOS interface state density

[19p-A17-1~11] 13.2 Insulator technology

[19p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Electron mobility improvement due to GaOx passivation layer formed by pre-deposition anneal in HfO2/In0.53Ga0.47As nMISFET with sub-1.0 nm EOT

△ [19p-A17-2] Study of the Al₂O₃/GaSb MOS structures with N₂plasma treatment

[19p-A17-3] Investigation of Al2O3 film characterization made by Atomic Layer Deposition method using H2O and O3 as oxidant source

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al₂O₃/GeO₂/p-Ge

[19p-A17-5] Effects of Oxygen radical irradiation on the electrical properties of Al₂O₃/GeO₂/p-Ge

[19p-A17-6] Kr/O₂ ECR plasma oxidation effects on Al₂O₃/Ge gate stack formed by ALD

△ [19p-A17-7] The impact of gate electrode on HfO₂/Al₂O₃/SiGe_0.32 MOS interface with plasma post-nitridation

[19p-A17-8] Fabrication and Evaluation of Germanium Oxide Film made by CVD process

[19p-A17-9] High Quality GeO₂/Ge Interface and Property Change of GeO₂ by Hf-PMA

[19p-A17-10] Improvement of GeO₂/Ge Interface Characteristics Using Kr/O₂ Plasma

[19p-A17-11] Interface structures and electrical properties of gate stack structures with thin GeO₂ layer formed by pulsed metal organic chemical vapor deposition

[20a-PA3-1~7] 13.2 Insulator technology

[20a-PA3-1] Silicon oxide layer created on insulators under high temperature and high humidity

△ [20a-PA3-2] A direct correlation between core-level shifts and surface morphology in SiON layer

[20a-PA3-3] Thermal annealing effect on paramagnetic defects in silicon nitride films (Ⅲ)

[20a-PA3-4] Hole trapping characteristics of low-dielectric constant SiCN charge trapping layer

[20a-PA3-5] Identification of electrical breakdown spots of polycrystalline HfO2 films

[20a-PA3-6] Possibility of Dipole Formation at High-k/High-k Hetero-oxide Interface

[20a-PA3-7] Nano-contact Heteroepitaxy of GaSb on Si(001) and the HfO2/GaSb MOS Characteristics

Sessions

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[19a-A17-1~12] 13.2 Insulator technology

▼ [19a-A17-1] Evidence for Si up-diffusion during scavenging of interfacial SiO2 in HfO2/SiO2/Si stack

△ [19a-A17-9] Optimization of SiN Composition Profile to Improve Erase-Retention Tradeoff in MONOS Memories

△ [19a-A17-11] CO2 Laser Annealing of Polysilazane Coated Film for Polycrystalline Silicon Thin Film Transistors.

▲ [19a-A17-12] Improvement of S-factor method for evaluation of MOS interface state density

[19p-A17-1~11] 13.2 Insulator technology

△ [19p-A17-2] Study of the Al2O3/GaSb MOS structures with N2 plasma treatment

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al2O3/GeO2/p-Ge

△ [19p-A17-7] The impact of gate electrode on HfO2/Al2O3/SiGe0.32 MOS interface with plasma post-nitridation

[20a-PA3-1~7] 13.2 Insulator technology

△ [20a-PA3-2] A direct correlation between core-level shifts and surface morphology in SiON layer

▼ [19a-A17-1] Evidence for Si up-diffusion during scavenging of interfacial SiO₂ in HfO₂/SiO₂/Si stack

△ [19a-A17-11] CO₂ Laser Annealing of Polysilazane Coated Film for Polycrystalline Silicon Thin Film Transistors.

△ [19p-A17-2] Study of the Al₂O₃/GaSb MOS structures with N₂plasma treatment

△ [19p-A17-4] Effects of thermal treatment on the electrical properties of ALD-grown Al₂O₃/GeO₂/p-Ge

△ [19p-A17-7] The impact of gate electrode on HfO₂/Al₂O₃/SiGe_0.32 MOS interface with plasma post-nitridation