The 75th JSAP Autumn Meeting, 2014

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Poster presentation

13. Semiconductors A (Silicon) » 13.2 Insulator technology

[20a-PA3-1~7] 13.2 Insulator technology

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA3 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA3会場)

9:30 AM - 11:30 AM

[20a-PA3-4] Hole trapping characteristics of low-dielectric constant SiCN charge trapping layer

○(M1)Shin Tanaka1, Shinji Naito1, Kiyoteru Kobayashi1 (Tokai Univ.1)

Keywords:SiCN,電荷捕獲,不揮発性メモリデバイス