Session information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-E5-1~13] 15.6 IV-group-based compounds

Mon. Mar 17, 2014 1:15 PM - 4:45 PM E5 (E105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[17p-E5-1] Effect of epi growth for SORI of 150mm diameter SiC wafer

^○Chiaki Kudou^1,2, Sachiko Ito⁵, Keiko Masumoto^1,5, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Johji Nishio^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Panasonic², ROHM³, Toshiba⁴, AIST⁵, Hitach⁶)

1:30 PM - 1:45 PM

[17p-E5-2] Validity evaluation of C-face quasi-growth experiments of 4H-SiC by 150mm-diameter wafers

^○Johji Nishio^1,2, Chiaki Kudou^1,3, Sachiko Ito⁴, Keiko Masumoto^1,4, Hirokuni Asamizu^1,5, Kentaro Tamura^1,5, Kazutoshi Kojima^1,4, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba Corp.², Panasonic Corp.³, AIST⁴, ROHM Co., Ltd.⁵, Hitachi, Ltd.⁶)

1:45 PM - 2:00 PM

△ [17p-E5-3] Relationship between growth conditions and stacking fault density in growth of epitaxial layers on 4H-SiC C-face substrates with vicinal off-angle of lower than 1°

^○Keiko Masumoto^1,2, Sachiko Ito^1,2, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

2:00 PM - 2:15 PM

[17p-E5-4] Measurement of electrical properties for SiC film using THz ellipsometry

^○Takashi Fujii¹, Toshiyuki Iwamoto¹, Yukinori Sato¹, Takeshi Nagashima² (Nippo Precision Co., Ltd.¹, Osaka Univ.²)

2:15 PM - 2:30 PM

[17p-E5-5] Impurity incorporation analysis of SiC during PVT crystal growth

^○Koichi Kakimoto¹, Bing Gao¹, Satoshi Nakano¹, Yoshihiro Kangawa¹, Shin-ichi Nishizawa² (RIAM, Kyushu Univ.¹, AIST²)

2:30 PM - 2:45 PM

▲ [17p-E5-6] Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystal grown by the physical vapor transport method

^○Bing Gao¹, Satoshi Nakano¹, Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹)

2:45 PM - 3:00 PM

▲ [17p-E5-7] Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals

^○Bing Gao¹, Satoshi Nakano¹, Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹)

3:00 PM - 3:15 PM

[17p-E5-8] Crystal growth of p-type SiC by the sublimation method using 2-zone heating system

^○Kazuma Eto^1,2, Satoru Takagi¹, Tomonori Miura^1,2, Tomohisa Kato^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

Break 15:15〜15:30 (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

▲ [17p-E5-9] TSD conversion on C face during solution growth of SiC

^○Shuiyu Xiao¹, Natsumi Hara¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya Univ¹)

3:45 PM - 4:00 PM

[17p-E5-10] Consideration of dislocation conversion during SiC solution growth based on elastic energy

^○Shunta Harada¹, Shiyu Xiao¹, Natsumi Hara¹, Hiroyasu Katsuno¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

4:00 PM - 4:15 PM

[17p-E5-11] Simultaneous real-time observation of bright field and interference images during solution growth of SiC

^○Sakiko Kawanishi¹, Takeshi Yoshikawa¹, Kazuki Morita¹ (The Univ. of Tokyo¹)

4:15 PM - 4:30 PM

△ [17p-E5-12] Behavior of the Threading Screw Dislocation Conversion on Convex Shape in Solution Growth of 4H-SiC

^○Daiki Koike¹, Tomonori Umezaki¹, Atsushi Horio¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

4:30 PM - 4:45 PM

△ [17p-E5-13] Planarization of 6 inch 4H-SiC wafer by using Catalyst-referred etching

^○Ai Isohashi¹, Yasuhisa Sano¹, Takeshi Okamoto¹, Tomohisa Kato², Kazuto Yamauchi¹ (Osaka Univ.¹, AIST²)

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