Oral presentation

08. Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[17p-F1-1~16] 8.3 Plasma deposition of thin film and surface treatment

Mon. Mar 17, 2014 2:00 PM - 6:15 PM F1 (F201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[17p-F1-1] Off-axis RF Magnetron Sputter-Deposition of Al doped ZnO Films

^○Yoshinobu Matsuda¹, Hironobu Yokoyama¹, Takato Nakashima¹, Shunsuke Oyamada¹, Masanori Shinohara¹ (Nagasaki Univ.¹)

2:15 PM - 2:30 PM

[17p-F1-2] ITO Thin Films Fabricated by Hybrid Facing-target Sputtering

^○Shinichi Morohashi¹, Fumihiro Takaki¹, Shunya Arakawa¹, Naoyuki Harada¹, Takuya Murata¹ (Yamaguchi Univ.¹)

2:30 PM - 2:45 PM

[17p-F1-3] Surface Potential Evaluation of Insulating Target under RF Sputtering Assisted by Surface-Wave Excited Plasma

^○Toshiya Hagihara¹, Tomonori Noda¹, Hirotaka Toyoda^1,2 (Nagoya Univ.¹, PLANT, Nagoya Univ.²)

2:45 PM - 3:00 PM

[17p-F1-4] Advanced Control of Plasma Enhanced Reactive Sputtering Process for Formation of Semiconductor Thin Films

Yuichi Setsuhara¹, ^○Kosuke Takenaka¹, Soichiro Osaki¹, Yutaro Suyama¹, Hirofumi Otani¹, Atsuki Kanai¹, Akinori Ebe² (Osaka Univ.¹, EMD Corp.²)

3:00 PM - 3:15 PM

[17p-F1-5] Deposition of resistance switching films by pulsed RF sputtering method

^○Masahiro Tsukamoto¹, Masaki Yamada¹, Osamu Sakai¹, Toshihiro Nakamura² (Kyoto Univ.¹, Osaka Electro-Communication Univ²)

3:15 PM - 3:30 PM

[17p-F1-6] Reduction treatment of resistance switching films with hydrazine produced by atmospheric pressure plasma.

^○Masaki Yamada¹, Osamu Sakai¹, Toshihiro Nakamura² (Kyoto Univ.¹, Osaka Electro-Communication Univ.²)

3:30 PM - 3:45 PM

△ [17p-F1-7] Formation of super water-repellent films by chemical vapor deposition with atmospheric pressure plasmas

^○（M2）Kuangda Sun¹, Keigo Takeda¹, Kenji Ishikawa¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

3:45 PM - 4:00 PM

△ [17p-F1-8] High-speed Treatment of Resin Film Surface for Packaging by Gliding Arc Plasma

^○Yuya Uchida¹, Naoya Hayashi¹, Hideto Tanoue¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Itsuo Yamamoto² (Toyohashi Univ. Technol.¹, Daisan Films Converting Co., Ltd²)

Break 16:00〜16:15 (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

△ [17p-F1-9] Fabrication of Diamond Film using Induction Thermal Plasmas Modulated into Triangular-like Waveform and Dependence of Radical Fluxes on Modulation Waveform Shapes

^○Sosuke Horita¹, Yosuke Haruta¹, Miyu Fukuzawa¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹, Tatsuo Ishijima¹ (Kanazawa Univ.¹)

4:30 PM - 4:45 PM

△ [17p-F1-10] Estimation of Electron Collision Cross Sections for TMS vapour

^○（M1）Satoru Kawaguchi¹, Kohki Satoh¹, Hidenori Itoh¹ (Muroran I. T.¹)

4:45 PM - 5:00 PM

▼ [17p-F1-11] Deposition Rate of Carbon Films Fabricated by H-assisted Plasma CVD: Pressure and Interelectrode Distance Dependence

^○Xiao Dong¹, Kazunori Koga¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Naho Itagaki¹, Masaharu Shiratani¹ (kyushu University¹)

5:00 PM - 5:15 PM

[17p-F1-12] Effects of Amplitude Modulation on Cluster Amount in Silane Plasma

^○Susumu Toko¹, Yuji Hashimoto¹, Yoshinori Kanemitu¹, Yoshihiro Torigoe¹, Hyunwoong Seo¹, Kunihiro Kamataki¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (Kyushu Univ.¹)

5:15 PM - 5:30 PM

[17p-F1-13] Importance of Non-emissive Hydrogen Flux on Plasma Process for SiH₄/H₂ System

^○Hirotaka Katayama¹, Isao Yoshida¹, Shigeo Yata¹, Akira Terakawa¹ (Panasonic Corp.¹)

5:30 PM - 5:45 PM

[17p-F1-14] The acceleration mechanism and the observation of RF bias enhanced neutral beam 2

^○Yasuaki Sakakibara¹, Yoshiyuki Kikuchi^1,2, Seiji Samukawa² (Tokyo Electron¹, Tohoku Univ.²)

5:45 PM - 6:00 PM

[17p-F1-15] Plasma treatment of Graphene for Atomic Layer Deposition

^○Takeshi Kitajima¹, Toshiki Nakano¹ (Nat. Def. Acad.¹)

6:00 PM - 6:15 PM

[17p-F1-16] Nitridation of silicon by nitrogen neutral beam

^○（PC）Yasuhiro Hara¹, Tomohiro Shimizu¹, Shoso Shingubara¹ (Kansai Univ.¹)