Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00〜13:00 (12:00 PM - 1:00 PM)

1:00 PM - 1:30 PM

[18p-E13-1] [Isamu Akasaki Award Speech]Chemistry on thermodynamic analysis of the compound semiconductor -thermodynamic analysis and new growth method -

^○Akinori Koukitu¹ (TUAT¹)

1:30 PM - 1:45 PM

[18p-E13-2] High quality GaN bulk crystal growth by acidic ammonothermal method

^○Makoto Saito^1,2, Quanxi Bao^1,3, Daisuke Tomida¹, Ｋｅｎｔａｒｏ Furusawa¹, Yuji Kagamitani², Rinzo Kayano³, Kun Qiao¹, Ｔｏhｒｕ Ishiguro¹, Chiaki Yokokyama¹, Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corp.², The Japan Steel Works³)

1:45 PM - 2:00 PM

[18p-E13-3] Introduction of the Dipping Technique to the Na-Flux Method for Controlling Surface Characteristics of Seed Crystals

^○Taro Sato¹, Masayuki Imanishi¹, Koshi Nakamura¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Yuma Todoroki¹, Daisuke Matsuo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka Univ.¹)

2:00 PM - 2:15 PM

△ [18p-E13-4] The Relationship between Growth Habit and the Behavior of Dislocations of GaN Crystals in the Na-Flux Coalescence Growth

^○Masayuki Imanishi¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Hideo Takazawa¹, Daisuke Matsuo¹, Yuma Todoroki¹, Mihoko Maruyama¹, Hirotada Asazu², Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka Univ.¹, Osaka Univ.²)

2:15 PM - 2:30 PM

[18p-E13-5] High rate GaN growth using Ga₂O vapor on Na-flux-GaN substrates

^○Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Yuan Bu¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ¹, Itochu Plastics Inc²)

2:30 PM - 2:45 PM

[18p-E13-6] Growth of GaN crystal using Ga₂O synthesized from Ga metal

^○Tomoaki Sumi¹, Masami Juta¹, Yuan Bu¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ.¹, Itochu Plastics Inc.²)

Break 14:45〜15:00 (2:45 PM - 3:00 PM)

3:00 PM - 3:15 PM

[18p-E13-7] First-Principles Calculation of Carbon-Added Na Flux GaN Growth Process

^○Takahiro Kawamura^1,2, Hiroki Imabayashi², Mihoko Maruyama², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa² (Mie Unv.¹, Osaka Univ.²)

3:15 PM - 3:30 PM

[18p-E13-8] Reduction in dislocations and stacking faults in semi-polar {11-22}GaN by hydride vapor phase epitaxy

^○Motohisa Ueno¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

3:30 PM - 3:45 PM

[18p-E13-9] Regrowth on semipolar GaN by Hydride Vapor Phase Epitaxy

^○Takashi Inagaki¹, Yasuhiro Hashimoto¹, keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

3:45 PM - 4:00 PM

[18p-E13-10] Impact of growth conditions of hydride vapor phase epitaxy on crystalline qualities of thick {20-21} GaN layers

^○Yasuhiro Hashimoto¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

4:00 PM - 4:15 PM

△ [18p-E13-11] Thermal cleaning of free-standing GaN substrates

^○（M1）Shunsuke Okada¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Reina Miyagawa², Osamu Eryu² (Mie Univ.¹, Nagoya Inst. Tech.²)

4:15 PM - 4:30 PM

△ [18p-E13-12] Study on carrier dynamics and piezoelectricity of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

^○（M1）Yuki Tsutsui¹, Hirotsugu Ogi¹, Nobutomo Nakamura¹, Yusuke Mori², Mamoru Imade², Masashi Yoshimura², Masahiko Hirao¹ (Osaka Univ. Grad. Sch. of Engineering Science¹, Osaka Univ. Grad. Sch. of Engineering²)

Break 16:30〜16:45 (4:30 PM - 4:45 PM)

4:45 PM - 5:00 PM

△ [18p-E13-13] Homo-epitaxial growth on trench patterned AlN free-standing substrate by HVPE

^○（M1）Yoshinobu Watanabe¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Yosuke Iwasaki², Shunro Nagata² (Mie Univ.¹, JFE Mineral Company, LTD. Research Laboratories²)

5:00 PM - 5:15 PM

[18p-E13-14] HVPE growth and characterization of ScN epilayers

^○Yuichi Oshima¹, Garcia Villora¹, Kiyoshi Shimamura¹ (Natianal Institute for Materials Science¹)

5:15 PM - 5:30 PM

[18p-E13-15] Structural and mechanical characterization of BN films prepared by Reactive Plasma-Assisted Coating (RePAC)—N2-flow rate effects

^○Masao Noma¹, koji Eriguchi², shigehiko Hasegawa³ (SHINKO SEIKI. Co., LTD¹, Kyoto University², Osaka University³)

5:30 PM - 5:45 PM

[18p-E13-16] Ion-beam-assisted MBE growth mechanism of single-crystal cubic boron nitride (c-BN)

^○Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (NTT BRL¹)

5:45 PM - 6:00 PM

[18p-E13-17] Luminescence property of hexagonal boron nitride films grown by high-temperature CVD

^○Naoki Umehara¹, Iori Kuwahara¹, Hey-Young Lee¹, Tetsuya Kouno³, Hiroko Kominami³, Yoichiro Nakanishi¹, Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³)

6:00 PM - 6:15 PM

[18p-E13-18] Structural characterization of hexigonal boron nitride films grown on asapphire substrate by CVD

^○Iori Kuwahara¹, Naoki Umehara¹, Tetsuya Kouno³, Hiroko Kominami³, Yoichiro Nakanishi¹, Kazuhiko Hara^1,2 (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³)