Oral presentation

17. Nanocarbon Technology » 17.1 Growth technology

[18p-E2-1~18] 17.1 Growth technology

Tue. Mar 18, 2014 1:15 PM - 6:00 PM E2 (E102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[18p-E2-1] Damage-free transfer method of graphene grown on SiC

^○Shinichi Tanabe¹, Kazuaki Furukawa², Hiroki Hibino² (NTT Photonics Labs.¹, NTT Basic Research Labs.²)

1:30 PM - 1:45 PM

[18p-E2-2] Role of [1-100] steps in graphene growth on SiC(0001) Si face

^○Hiroyuki Kageshima¹, Hiroki Hibino¹, Hiroshi Yamaguchi¹, Masao Nagase² (NTT Basic Research Labs.¹, Univ. Tokushima²)

1:45 PM - 2:00 PM

[18p-E2-3] Ridge formation and etching of graphene after annealing in purified hydrogen

^○Makoto Takamura¹, Shohei Takagi^1,2, Fumihiko Maeda¹, Hiroki Hibino¹ (NTT Basic Research Labs.¹, Nagaoka Univ. of Tech.²)

2:00 PM - 2:15 PM

[18p-E2-4] Graphene growth on the buffer layer on SiC(0001) by molecular beam epitaxy

^○Fumihiko Maeda¹, Makoto Takamura¹, Hiroki Hibino¹ (NTT BRL¹)

2:15 PM - 2:30 PM

[18p-E2-5] High resolution imaging of graphene on 4H-SiC(0001) using noncontact scanning nonlinear dielectric microscopy

^○Kohei Yamasue¹, Hirokazu Fukidome¹, Kazutoshi Funakubo¹, Maki Suemitsu¹, Yasuo Cho¹ (Tohoku Univ.¹)

2:30 PM - 2:45 PM

[18p-E2-6] Electronic structure of the graphene nanoribbons grown on vicinal SiC surfaces by molecular-beam epitaxy

^○Takashi Kajiwara¹, Anton Visikovskiy¹, Kan Nakatsuji³, Takushi Iimori², Fumio Komori², Satoru Tanaka¹ (Kyushu Univ.¹, Univ. of Tokyo², Tokyo Inst. Tech.³)

2:45 PM - 3:00 PM

[18p-E2-7] Discussion about epitaxial graphene growth on Cu(111) substrates based on the results of vacuum annealing experiments

^○Shuichi Ogawa¹, Takatoshi Yamada², Shinji Ishiduka³, Akitaka Yoshigoe⁴, Masataka Hasegawa², Yuden Teraoka⁴, Yuji Takakuwa¹ (Tohoku Univ.¹, AIST², Nagaoka Univ. Tech.³, JAEA⁴)

3:00 PM - 3:15 PM

[18p-E2-8] Direct Synthesis of Graphene by Laser Annealing Using Cobalt Catalyst

^○Yusuke Ishibashi¹, Keisuke Koshida¹, Yasushi Kanai¹, Yasuhide Ohno¹, Kenzo Maehashi¹, Koichi Inoue¹, Kazuhiko Matsumoto¹ (ISIR, Osaka Univ.¹)

3:15 PM - 3:30 PM

[18p-E2-9] Plasma CVD apparatus with infrared-light LEDs

^○Naruki Mori¹, Shigeru Yamauchi², Takao Komiyama¹, Yasunori Chonan¹, Hiroyuki Yamaguchi¹, Takashi Aoyama¹ (Akita Prefectural Univ¹, Akita Prefectural Univ Institute of Wood Technology²)

Break 15:30〜15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[18p-E2-10] Process development for multi-layer graphene growth on 300mm Si wafer by low-temperature thermal CVD

^○Daisuke Nishide¹, Takashi Matsumoto¹, Ban Ito¹, Yuichi Yamazaki¹, Masayuki Katagiri¹, Hisao Miyazaki¹, Munehito Kagaya¹, Ryota Ifuku¹, Makoto Wada¹, Tatsuro Saito¹, Masayuki Kitamura¹, Masahito Watanabe¹, Naoshi Sakuma¹, Akihiro Kajita¹, Tadashi Sakai¹ (LEAP¹)

4:00 PM - 4:15 PM

[18p-E2-11] Growth of graphene over layers on graphene nanoribbon templates

^○Haruki Kitakawa¹, Ryota Negishi¹, Hirohumi Tanaka², Minoru Hukumori², Takuzi Ogawa², Yoshihiro Kobayashi¹ (Osaka Univ.¹, Osaka Univ.²)

4:15 PM - 4:30 PM

[18p-E2-12] Formation of Graphene nanoribbon by dehydrogen reaction of n-alkane on Au(111)

^○Osamu Endo¹, Masashi Nakamura², Kenta Amemiya³ (Tokyo Univ. of Agriculture and Technology¹, Chiba Univ.², KEK-PF³)

4:30 PM - 4:45 PM

[18p-E2-13] Effect of molecular structure on growth of nitrogen-doped graphene

^○Tokio Katoh¹, Gaku Imamura¹, Seiji Obata¹, Koichiro Saiki¹ (Univ. of Tokyo¹)

4:45 PM - 5:00 PM

[18p-E2-14] In-situ LEEM Observation of Graphene Synthesis from Metal-Carbon Hybrid Films

^○Hisayoshi Oshima¹, Kenji Okeyui¹, Norikazu Hosokawa¹, Hiroki Hibino² (DENSO CO. Research Labs.¹, NTT Basic Research Labs.²)

5:00 PM - 5:15 PM

[18p-E2-15] First principles analysis on electronic transport in graphene under Al2O3

^○Tomoaki Kaneko^1,2, Takahisa Ohno^1,2,3 (NIMS¹, MARCEED², Univ. Tokyo³)

5:15 PM - 5:30 PM

[18p-E2-16] LEED structure analysis of monolayer h-BN grown by CVD

^○Hiroki Hibino¹, Carlo Orofeo¹, Hiroyuki Kageshima¹, Satoru Suzuki¹, Seigi Mizuno² (NTT Basic Research Labs.¹, Kyushu Univ.²)

5:30 PM - 5:45 PM

▲ [18p-E2-17] Growth mechanism of monolayer and few-layer graphene crystals in solid precursor based chemical vapor deposition

^○Golap Kalita¹, Subash Sharma¹, Remi Papon¹, Sachin Shinde¹, Tanemura Masaki¹ (Nagoya Inst. Technol.¹)

5:45 PM - 6:00 PM

[18p-E2-18] Direct Synthesis of Graphene on the Substrate Using Solid Phase Reaction

^○Takatoshi Sugiura¹, Ryou Hirano¹, Golap Kalita¹, Masaki Tanemura¹ (Nagoya Inst. Technol.¹)

Session information

[18p-E2-1~18] 17.1 Growth technology

▲ [18p-E2-17] Growth mechanism of monolayer and few-layer graphene crystals in solid precursor based chemical vapor deposition